Dr Giorgia Longobardi

CEO, Cambridge GaN Devices Ltd

Cambridge GaN Devices’ (CGD) new approach to designing high-performance Gallium Nitride (GaN) power electronic devices could transform the 600V semiconductor industry by offering a more efficient alternative to current silicon-based and GaN devices.

GaN’s physical properties mean it can operate at higher frequencies than silicon, resulting in circuits that are smaller, faster and more efficient. While GaN power devices already exist, CGD’s approach overcomes the stability issues associated with them, through use of a novel, patented transistor and adding smart functionalities. This new combination makes CGD’s solutions more accessible, allowing customers to leverage the benefits of GaN in a wider range of applications.

The University of Cambridge spin-out was co-founded by CGD CEO, Giorgia Longobardi who had a central role in engineering the core technology. Supported by the SME Leaders Programme, Giorgia is defining the company’s strategy while developing a rapidly growing staff. With an energy-efficient product that delivers from 5- to 10 times less power losses, Giorgia’s vision is to establish production partnerships and a customer-base that will allow CGD to target the £400 million GaN power device market.

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