Co-Founder and Chief Executive, Cambridge GaN Devices Ltd.
More than 80% of the world’s electricity passes through a power electronics circuit where the power device is the core. The power device operates as a switch between off- (no current flowing) and on-state (current flowing). However, there are substantial energy losses during this process using current technology. Cambridge GaN Devices uses Gallium Nitride (GaN) to cut energy losses and deliver the highest energy efficiency, as well as being smart and reliable in the long term. It is a single on-chip solution that makes the product a very efficient and easy-to-use power device.
Cambridge GaN Devices is a University of Cambridge spin-out, co-founded by Dr Giorgia Longobardi. Dr Longobardi is its Chief Executive with a team of 23 employees and several consultants. She has taken a central role in engineering the core technology.
In 2019, Dr Longobardi joined the SME Leaders programme and credits it, saying: “The mentoring has provided useful answers when needed, in particular in preparation for pitching and developing a business case for Series A fundraising, which successfully secured £6.8 million in January 2021. Peer networking has also been extremely valuable as there are many common challenges for entrepreneurs. The solution to my problems has often been available within the SME contacts created through the programme.”
Dr Longobardi is aiming to make Cambridge GaN Devices the number one provider of GaN power integrated circuits. She is targeting applications in consumer electronics, industrial and automotive segments, with a focus on power supplies for mobile phones, data centres and LED drivers for vertical horticulture. With 26 patent applications already under its belt, the company’s innovations could cut millions of tonnes of CO2 emissions as well as help make the upcoming expansion of data centres much more sustainable.